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| PD - 95613 IRG4BC15UDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching * IGBT Co-packaged with ultra-soft-recovery antiparallel diode * Industry standard TO-220AB package * Lead-Free C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 2.02V @VGE = 15V, IC = 7.8A Benefits Best Value for Appliance and Industrial Applications * High noise immune "Positive Only" gate driveNegative bias gate drive not necessary * For Low EMI designs- requires little or no snubbing * Single Package switch for bridge circuit applications * Compatible with high voltage Gate Driver IC's * Allows simpler gate drive n-channel TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 14 7.8 42 42 4.0 16 20 49 19 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --- --- --- --- --- Typ. --- --- 0.50 --- 2 (0.07) Max. 2.7 7.0 --- 80 --- Units C/W g (oz) www.irf.com 1 8/2/04 IRG4BC15UDPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES Parameter Collector-to-Emitter Breakdown Voltage V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage Min. 600 --- --- --- --- Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage --- Forward Transconductance 4.1 Zero Gate Voltage Collector Current --- --- Diode Forward Voltage Drop --- --- Gate-to-Emitter Leakage Current --- Typ. --- 0.63 2.02 2.56 2.21 --- -10 6.2 --- --- 1.5 1.4 --- Max. Units Conditions --- V VGE = 0V, IC = 250A --- V/C VGE = 0V, IC = 1.0mA 2.4 IC = 7.8A VGE = 15V --- V IC = 14A --- IC = 7.8A, TJ = 150C 6.0 VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 250A --- S VCE = 100V, IC = 7.8A 250 A VGE = 0V, VCE = 600V 1400 VGE = 0V, VCE = 600V, TJ = 150C 1.8 V IC = 4.0A 1.7 IC = 4.0A, TJ = 150C 100 nA VGE = 20V VGE(th) VGE(th)/TJ gfe ICES VFM IGES Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. 23 4.0 9.6 17 20 160 83 0.24 0.26 0.50 16 21 180 220 0.76 7.5 410 37 5.3 28 38 2.9 3.7 40 70 280 240 Max. Units Conditions 35 IC = 7.8A 6.0 nC VCC = 400V 14 VGE = 15V --- TJ = 25C --- ns IC = 7.8A, VCC = 480V 240 VGE = 15V, RG = 75 120 Energy losses include "tail" and --- diode reverse recovery. --- mJ 0.63 --- TJ = 150C, --- ns IC = 7.8A, VCC = 480V --- VGE = 15V, RG = 75 --- Energy losses include "tail" and --- mJ diode reverse recovery. --- nH Measured 5mm from package --- VGE = 0V --- pF VCC = 30V --- = 1.0MHz 42 ns TJ = 25C 57 TJ = 125C IF = 4.0A 5.2 A TJ = 25C 6.7 TJ = 125C VR = 200V 60 nC TJ = 25C 110 TJ = 125C di/dt 200A/s --- A/s TJ = 25C --- TJ = 125C IRG4BC15UDPBF 10 8 Load Current ( A ) 6 60% of rated voltage Duty cycle : 50% Tj = 125C Tsink = 90C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 11W 4 2 Ideal diodes 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C, Collector-to-Emitter Current (A) TJ = 150 C 10 10 TJ = 150 C 1 1 TJ = 25 C V GE = 15V 20s PULSE WIDTH 1 10 TJ = 25 C 0.1 0.1 0.1 5.0 V CC = 50V 5s PULSE WIDTH 10.0 15.0 20.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics IRG4BC15UDPBF 14 12 10 8 6 4 2 0 4.0 VGE = 15V 80s PULSE WIDTH VCE , Collector-to Emitter Voltage (V) Maximum DC Collector Current(A) IC = 14A 3.0 IC = 7.8A 2.0 IC = 3.9A 1.0 25 50 75 100 125 150 TC , Case Temperature ( C) -60 -40 -20 0 20 40 60 80 100 120 140 T J , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case IRG4BC15UDPBF 800 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 7.8A C, Capacitance (pF) 600 16 Cies 400 12 8 Coes 200 Cres 0 4 0 1 10 100 0 5 10 15 20 25 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.48 VCC = 480V VGE = 15V 10 RG = 75 VGE = 15V VCC = 480V IC = 14A 1 Total Switching Losses (mJ) 0.46 Total Switching Losses (mJ) TJ = 25C I C = 7.8A IC = 7.8A IC = 3.9A 0.44 0.42 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG, Gate Resistance () T J, Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature IRG4BC15UDPBF 2.0 100 Total Switching Losses (mJ) 1.6 VCC = 480V 1.2 IC, Collector-to-Emitter Current (A) RG = 75 TJ = 150C VGE = 15V VGE = 20V T J = 125 SAFE OPERATING AREA 10 0.8 0.4 0.0 2 4 6 8 10 12 14 16 1 1 10 100 1000 IC, Collector Current (A) VDS, Drain-to-Source Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA 10 TJ = 150C T = 125C J J T = 25C 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current IRG4BC15UDPBF 50 14 VR = 200V TJ = 125C TJ = 25C 45 I F = 8.0A I F = 4.0A 12 10 40 I F = 8.0A I F = 4.0A trr- (nC) 35 Irr- ( A) 8 6 30 4 25 VR = 200V TJ = 125C TJ = 25C 20 100 2 di f /dt - (A/s) 1000 0 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 VR = 200V TJ = 125C TJ = 25C 160 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200V TJ = 125C TJ = 25C I F = 8.0A I F = 8.0A di (rec) M/dt- (A /s) 120 I F = 4.0A I F = 4.0A Qrr- (nC) 80 40 0 100 di f /dt - (A/s) 1000 100 100 A di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt, IRG4BC15UDPBF Same type device as D.U.T. 90% Vge +Vge Vce 80% of Vce 430F D.U.T. Ic 10% Vce 90% Ic Ic 5% Ic td(off) tf Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eoff = t1+5S Vce Ic Vce ic dtdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = trr id dt Ic dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce Ic Eon = Vce ie dt dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd idIc dt Vd dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr IRG4BC15UDPBF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000F 100V Vc* D.U.T. RL = 0 - 480V 480V 4 X I C @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit IRG4BC15UDPBF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature VCC=80%(VCES), VGE=20V, L=10H, RG = 75 Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 HEXFET GATE 11234- LEAD ASSIGNMENTS LEAD ASSIGNMENTS IGBTs, CoPACK 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR 14.09 (.555) 13.47 (.530) 2GATE DRAIN 3DRAINSOURCE SOURCE 4 - DRAIN DRAIN 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMP LE : T HIS IS AN IRF 1010 LOT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN T H E AS S E MB L Y LINE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y LOT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04 |
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